PIN photodiodes
First Sensor develops and manufactures photodiodes in series covering a range of technologies.
Materials and processing can be adapted to individual customer and product requirements, thus enabling the optimization of parameters such as sensitivity at different wavelengths, speed and capacity. We will be happy to help you find the ideal technology for your application.
Information about PIN photodiodes
A photodiode is an active component that converts light into an electrical voltage (photovoltaic effect) or photocurrent. The p-n junction in the silicon semiconductor serves as the physical basis for this process. When photons with sufficient energy are absorbed by the detector, this results in the formation of charge carriers (electron-hole pairs), which are separated in the space-charge region and thus generate the photocurrent.
While the charge separation also occurs without the application of an external voltage, the process can be accelerated by such a reverse voltage. The photocurrent remains linear to the absorbed light volume across many orders of magnitude if the diode is not operated in a state of saturation.
Depending on the external connections, we differentiate between two different operating states: element and diode. In the case of element operation, the diode is connected directly to the consumer without the use of an external voltage source. No dark current flows in this operating state, which facilitates the detection of minimal intensities.
During diode operation, an external voltage supply is connected with the consumer in series, whereby the voltage is applied in reverse direction. This operating mode is ideal for applications in which a rapid signal response is required. The main disadvantage is the dark current, which grows exponentially with the temperature.
A PIN diode comprises a near-intrinsic semiconductor region – usually the space-charge region – sandwiched between a p-type diode and an n-type substrate. However, the term is also used for components with inverse conductivity, provided that no other non-linear effects are utilized in the component.
Series 2: UV/blue-sensitive photodiodes
UV-sensitive photodiodes for applications in the spectral range below 300 nm. The enhanced UV sensitivity is achieved by adapting the anti-reflective coating and optimizing the vertical profile of the photodiode structure.
Special features
- Enhanced UV sensitivity
- Suppressed IR sensitivity
- Low dark current
- Long-term stability of detection properties
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 5V |
Rise time (ns) 410nm, 5V, 50Ω |
|
|---|---|---|---|---|---|---|---|
| 501103 | PS1-2 | TO52 | 1.0×1.0 | 1 | 0.01 | 50 | Download |
| 500981 | PS1-2 | LCC6.1 | 1.0×1.0 | 1 | 0.01 | 50 | Download |
| 500046 | PC5-2 | TO5 | Ø 2.52 | 5 | 0.3 | 150 | Download |
| 501230 | PS7-2 | TO5 | 2.66×2.66 | 7 | 0.4 | 200 | Download |
| 500041 | PC10-2 | TO5 | Ø 3.57 | 10 | 1 | 300 | Download |
| 501231 | PS13-2 | TO5 | 3.5×3.5 | 13 | 1 | 300 | Download |
| 501232 | PS33-2 | TO8 | 5.7×5.7 | 33 | 2 | 800 | Download |
| 500045 | PC50-2 | BNC | Ø 7.98 | 50 | 5 | 1000 | Download |
| 501261 | PS100-2 | BNC | 10×10 | 100 | 10 | 2000 | Download |
| 500047 | PS100-2 | CERpin | 10×10 | 100 | 10 | 2000 | Download |
Selected chips are also available with band pass filter:
Series 6b: blue/green-sensitive photodiodes
PIN photodiodes with enhanced sensitivity in blue and green spectral range.
Special features
- Low capacitance
- Very low dark current
- Long-term stability of detection properties
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 5V |
Rise time (ns) 410nm, 5V, 50Ω |
|
|---|---|---|---|---|---|---|---|
| 501429 | PS1-6b | TO52S1 | 1 x 1 | 1 | 0.05 | 10 | Download |
| 501430 | PS1-6b | LCC6.1 | 1 x 1 | 1 | 0.05 | 10 | Download |
| 501297 | PC5-6b | TO5 | Ø 2.52 | 5 | 0.1 | 20 | Download |
| 501242 | PS7-6b | TO5 | 2.7×2.7 | 7 | 0.15 | 25 | Download |
| 501229 | PC10-6b | TO5 | Ø 3,57 | 10 | 0.2 | 45 | Download |
| 501241 | PS13-6b | TO5 | 3.5×3.5 | 13 | 0.25 | 50 | Download |
| 501244 | PS33-6b | TO8 | 5.7×5.7 | 33 | 0.6 | 140 | Download |
| 501258 | PS100-6b | LCC10S | 10×10 | 100 | 1 | 200 | Download |
| 501135 | PS100-6b | CERpinE | 10×10 | 100 | 1 | 200 | Download |
| 501045 | PS100-6b | CERpinG | 10×10 | 100 | 1 | 200 | Download |
Selected chips are also available with band pass filter:
Series 5b: high speed blue-sensitive photodiodes
This range of high-speed epitaxial photodiodes is designed specifically for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components.
Special features
- Photodiodes with epitaxial layer structure for fast rise times at low reverse voltages.
- Epitaxial layer thickness optimized for highest speed and maximum sensitivity at 350-500 nm.
- Low operating voltage – fully depleted at 3.5 V
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 3.5V |
Rise time (ns) 405nm, 3.5V, 50Ω |
|
|---|---|---|---|---|---|---|---|
| 501424 | PS1.0-5b | TO52S1 | 1.0×1.0 | 1 | 0.01 | 1.3 | Download |
| 501428 | PS1.0-5b | LCC6.1 | 1.0×1.0 | 1 | 0.01 | 1.3 | Download |
| 501425 | PS7-5b | TO5 | 2.7×2.7 | 7 | 0.5 | 5 | Download |
| 501426 | PC10-5b | TO5 | Ø3.57 | 10 | 0.5 | 6 | Download |
| 501427 | PS13-5b | TO5 | 3.5×3.5 | 13 | 1 | 6 | Download |
Series 5t: high speed red-sensitive photodiodes
This range of high-speed epitaxial photodiodes is designed specifically for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components.
Special features
- Photodiodes with epitaxial layer structure for fast rise times at low reverse voltages.
- Epitaxial layer thickness optimized for highest speed and maximum sensitivity at 800 nm.
- Low operating voltage – fully depleted at 3.5 V
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 3.5V |
Rise time (ns) 850nm, 3.5V, 50Ω |
|
|---|---|---|---|---|---|---|---|
| 501126 | PS0.25-5t | LCC6.1 | 0.5×0.5 | 0.25 | 0.01 | 0.4 | Download |
| 501434 | PS0.25-5t | SMD1206 | 0.5×0.5 | 0.25 | 0.01 | 0.4 | Download |
| 501125 | PC0.55-5t | LCC6.1 | Ø 0.84 | 0.55 | 0.01 | 1 | Download |
| 501289 | PC0.55-5t | T1 3/4 | Ø 0.84 | 0.55 | 0.01 | 1 | Download |
| 501290 | PC0.55-5t | T1 3/4 black | Ø 0.84 | 0.55 | 0.01 | 1 | Download |
| 501127 | PS1-5t | LCC6.1 | 1.0×1.0 | 1 | 0.01 | 1 | Download |
| 501432 | PS7-5t | TO5 | 2.7×2.7 | 7 | 0.5 | 2 | Download |
Series 5: high speed NIR-sensitive photodiodes
These high-speed epitaxial photodiodes are ideal for VIS and NIR applications with low operating voltages.
Special features
- Photodiodes with epitaxial layer structure for fast rise times at low reverse voltages.
- Epitaxial layer thickness optimized for highest speed and maximum sensitivity at 800 nm.
- Low dark current even at high operating temperatures.
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 20V |
Rise time (ns) 850nm, 20V, 50Ω |
|
|---|---|---|---|---|---|---|---|
| 500122 | PS0.25-5 | TO52S1 | 0.5×0.5 | 0.25 | 0.1 | 0.4 | Download |
| 500119 | PS0.25-5 | TO52S3 | 0.5×0.5 | 0.25 | 0.1 | 0.4 | Download |
| 500973 | PS0.25-5 | LCC6.1 | 0.5×0.5 | 0.25 | 0.1 | 0.4 | Download |
| 500116 | PS0.25-5 | SMD1206 | 0.5×0.5 | 0.25 | 0.1 | 0.4 | Download |
| 501257 | PC0.55-5 | TO5251 | Ø 0.84 | 0.55 | 0.2 | 1 | Download |
| 501124 | PC0.55-5 | LCC6.1 | Ø 0.84 | 0.55 | 0.2 | 1 | Download |
| 500127 | PS1.0-5 | TO52S1 | 1.0×1.0 | 1 | 0.2 | 1.5 | Download |
| 500128 | PS1.0-5 | TO52S3 | 1.0×1.0 | 1 | 0.2 | 1.5 | Download |
| 501128 | PS1.0-5 | LCC6.1 | 1.0×1.0 | 1 | 0.2 | 1.5 | Download |
| 501291 | PS7-5 | TO5 | 2.7×2,7 | 7 | 0.5 | 2 | Download |
| 501218 | PS11.9-5 | TO5 | 3.45×3.45 | 11.9 | 1 | 3 | Download |
| 500097 | PC20-5 | TO8 | Ø 5.05 | 20 | 2 | 3.5 | Download |
| 501292 | PS33-5 | TO8 | 5.7×5.7 | 33 | 2 | 3.5 | Download |
| 501011 | PS100-5 | LCC10S | 10x10 | 100 | 2 | 5 | Download |
| 501433 | PS100-5 | CERpinG | 10x10 | 100 | 2 | 5 | Download |
Series 6: IR photodiodes with minimal dark current
High-performance PIN photodiodes for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection.
Special features
- PIN photodiodes optimized for photovoltaic and photoconductive use
- Very low dark current
- High shunt resistance
- Long charge carrier life time
- High breakdown voltage
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 10V |
Rise time (ns) 850nm, 10V, 50Ω |
||
|---|---|---|---|---|---|---|---|---|
| 500151 | PC1-6 | TO52S1 | Ø 1.13 | 1 | 0.05 | 10 | Download | |
| 500482 | PC1-6 | TO52S3 | Ø 1.13 | 1 | 0.05 | 10 | Download | |
| 501214 | PC5-6 | TO5 | Ø 2.52 | 5 | 0.1 | 13 | Download | |
| 501221 | PS7-6 | TO5 | 2.66×2.66 | 7 | 0.1 | 15 | Download | |
| 501193 | PC10-6 | TO5 | Ø 3.57 | 10 | 0.2 | 20 | Download | |
| 501246 | PS13-6 | TO5 | 3.5×3.5 | 13 | 0.2 | 20 | Download | |
| 500113 | PC20-6 | TO8 | Ø 5.05 | 20 | 0.3 | 25 | Download | |
| 501298 | PS33-6 | TO8 | 5.7×5.7 | 33 | 0.4 | 25 | Download | |
| 500103 | PC50-6 | TO8S | Ø 7.98 | 50 | 0.5 | 30 | Download | |
| 500082 | PC100-6 | BNC | Ø 11.28 | 100 | 1 | 40 | Download | |
| 501264 | PS100-6 | BNC | 10×10 | 100 | 1 | 40 | Download | |
| 501435 | PS100-6 | LCC10S | 10×10 | 100 | 1 | 40 | Download | |
| 500149 | PS100-6 | CERpinG | 10×10 | 100 | 1 | 40 | Download |
Series 7: fully depletable IR photodiodes
Optimized for the most demanding applications requiring minimal capacitance.
Special features
- Fully depletable
- Very low capacitance levels
- Large depletion region at low reverse voltage
- Low dark current
- High NIR sensitivity, typ. 0.65 A/W at 950 nm
| Order # Chip Package |
Active Area Size (mm) |
Area (mm²) | Dark current (nA) 10V |
150V | Capacitance (pf) 10V |
150V | Rise time (ns) 905nm, 10V, 50Ω |
150V | |
|---|---|---|---|---|---|---|---|---|---|
| 501285 PC5-7 TO8i |
Ø 2.52 | 5 | 0.05 | 0.25 | 6 | 2.5 | 45 | 14 | Download |
| 501287 PC20-7 TO8Si |
Ø 5.05 | 20 | 0.2 | 1 | 20 | 8 | 50 | 14 | Download |
| 501286 PC10-7 TO8i |
Ø 3.57 | 10 | 0.1 | 0.5 | 12 | 4.5 | 50 | 14 | Download |
| 501317 PS100-7 LCC10G |
10×10 | 100 | 1.5 | 10 | 90 | 32 | 50 | 14 | Download |
Series Q: photodiodes for 1064 nm
These photodiodes are ideal for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources. The components are available as single detectors, quadrant detectors or surface arrays.
Special features
- Rapid response times
- Low noise levels
- Low capacitance
- Maximum sensitivity at 980 nm
| Order # | Chip | Package | Active Area Size (mm) |
Area (mm²) | Dark current (nA) 150V |
Rise time (ns) 1064nm, 150V, 50Ω |
|
|---|---|---|---|---|---|---|---|
| 501446 | PC10-Q | TO8i | Ø 3.57 | 10 | 0.5 | 14 | Download |
| 501447 | PC20-Q | TO8Si | Ø 5.05 | 20 | 1 | 14 | Download |
| 501273 | PS100-Q | LCC10G | 10x10 | 100 | 80 | 14 | Download |
| 501448 | PC50-Q | TO8Si | Ø 8 | 50 | 2.5 | 14 | Download |
