First Sensor develops and manufactures avalanche photodiodes in series covering a range of technologies.
Materials and processing can be adapted to individual customer and product requirements, thus enabling the optimization of parameters such as sensitivity at different wavelengths, speed and capacity. We will be happy to help you find the ideal technology for your application.
(T=typ. 23 °C, M=100)
Avalanche photodiodes are diodes with an internal gain mechanism. As in the case of standard diodes, photons generate electron-hole pairs, which are accelerated by the applied external voltage such that further electrons are introduced to the conduction band by means of impact ionization. These secondary electrons can in turn absorb sufficient energy to raise further electrons into the conduction band. A multiplication factor of several hundred can thus be achieved.
Avalanche diodes are usually employed in the case of very low optical signal strengths, but are also used for applications with high modulation frequencies. As of frequencies of approx. 60 MHz, the noise level heightened by the avalanche effect is generally lower than that produced by a conventional diode in combination with external electronic amplification.
Typical applications include distance measurement at low signal levels and optical communication. First Sensor offers a wide range of APD detectors with different housings. With components optimized for the blue, red, and infrared spectral range between 905 and 1064 nm, our range includes the right solution for virtually all applications.
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Please search by complete product numbers, e.g. CTE7005GY4 or 501430. In order to increase the number of search results, please search by part of the product number only, e.g. CTE7.